KSC1815YTA
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NPN BJT Transistor, 50V, 150mA, 80MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 50V Collector-Emitter Voltage (VCEO) and 150mA maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 70 and a transition frequency of 80MHz. Encased in a TO-92-3 package, it operates within a temperature range of -55°C to 125°C with a power dissipation of 400mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 70 |
| Polarity | NPN |
| Frequency | 80MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 1MHz |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 2000 |
| Power Dissipation | 400mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 400mW |
| Gain Bandwidth Product | 80MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
