KSC2383OTA
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NPN BJT Transistor, 160V, 1A, 100MHz, TO-226-3
Дополнительная информация
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-226-3 package. Features a maximum collector-emitter voltage of 160V, a continuous collector current rating of 1A, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 900mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | KSC2383 |
| Weight | 0.3711027g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-226-3 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 160V |
| Package Quantity | 1 |
| Power Dissipation | 900mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1A |
| Max Power Dissipation | 900mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 1.5V |
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