KSC5019MTA
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NPN BJT Transistor, 2A, 30V VCBO, 150MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 2A maximum collector current and 150MHz transition frequency. This through-hole component offers a 10V collector-emitter voltage and 30V collector-base voltage. With a minimum hFE of 140 and a maximum power dissipation of 750mW, it operates within a temperature range of -55°C to 150°C. Packaged in an Ammo Pack, this RoHS compliant transistor is housed in a TO-92-3 package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.24g |
| hFE Min | 140 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 1MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 10V |
| Package Quantity | 2000 |
| Power Dissipation | 750mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 2A |
| Max Power Dissipation | 750mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Saturation Voltage | 500mV |
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