KSD1691YS
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NPN BJT Transistor, 60V, 5A, TO-126, Through Hole
Дополнительная информация
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector current of 5A and a collector-emitter voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 3MHz. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.3W. This RoHS compliant component is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.761g |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-126 |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 250 |
| Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 100mV |
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