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NPN BJT Transistor, 30V, 0.5A, 125MHz, TO-92
Дополнительная информация
NPN Darlington bipolar junction transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Offers a high minimum DC current gain (hFE) of 10000 and a transition frequency of 125MHz. Maximum power dissipation is 625mW, with an operating temperature range from -55°C to 150°C. This RoHS compliant component is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 125MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
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