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NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 40V Collector-Emitter Voltage (VCEO) and 600mA maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-92 case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.24g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92 |
| Max Frequency | 300MHz |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
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