KSP2222ATF

Снят с производства
KSP2222ATF - Onsemi
Увеличить
Краткое описание: NPN BJT Transistor, 40V VCEO, 600mA IC, 300MHz fT, TO-92
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

NPN Epitaxial Silicon Transistor, 2000-REEL. Features a 40V Collector-Emitter Voltage (VCEO) and 600mA Max Collector Current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-92-3 through-hole mount configuration, this RoHS compliant component operates from -55°C to 150°C with a 625mW power dissipation.
RoHS Compliant
Mount Through Hole
Width 3.86mm
Height 4.58mm
Length 4.58mm
Weight 0.24g
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-92-3
Max Frequency 300MHz
Current Rating 600mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 1
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.