KSP42TA
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Краткое описание:
NPN BJT 300V 500mA 50MHz TO-92 Transistor
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92-3 package. Features 300V collector-emitter voltage (VCEO) and 300V collector base voltage (VCBO). Offers a maximum collector current of 500mA and a power dissipation of 625mW. Operates with a transition frequency of 50MHz and a minimum hFE of 40. This RoHS compliant component is designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.24g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 50MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
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