L14N1

Снят с производства
L14N1 - Onsemi
Увеличить
Краткое описание: NPN Phototransistor TO-18 30V 600mW Through Hole
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The L14N1 is a TO-18 packaged NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum power dissipation of 600mW. It operates over a temperature range of -65°C to 125°C and is RoHS compliant. The device is mounted through a hole and has a viewing angle of 80°.
RoHS Compliant
Mount Through Hole
Polarity NPN
Fall Time 16us
Lead Free Lead Free
Packaging Bulk
Wavelength 880nm
Orientation Top View
Package/Case TO-18
Viewing Angle 80°
RoHS Compliant Yes
Package Quantity 500
Power Dissipation 600mW
Number of Elements 1
Max Power Dissipation 300mW
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.