MJD112G

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MJD112G - Onsemi
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Краткое описание: NPN Darlington Transistor 100V 2A DPAK
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar junction transistor (BJT) in a DPAK package, featuring a 100V collector-emitter voltage (VCEO) and a continuous collector current rating of 2A. This component offers a maximum power dissipation of 1.75W and a minimum hFE of 1000. It operates within a temperature range of -65°C to 150°C and is RoHS compliant. The DPAK package measures 6.73mm in length, 6.22mm in width, and 2.38mm in height.
RoHS Compliant
Width 6.22mm
Height 2.38mm
Length 6.73mm
hFE Min 1000
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Halogen Free Halogen Free
Package/Case DPAK
Current Rating 2A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 100V
Package Quantity 75
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 25MHz
Max Collector Current 2A
Max Power Dissipation 1.75W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Moisture Sensitivity Level 1
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V

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