MJD210G

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MJD210G - Onsemi
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Краткое описание: PNP BJT Transistor, 25V, 5A, 65MHz, DPAK
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in DPAK package. Features a 25V collector-emitter voltage (VCEO) and a 5A maximum collector current. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 65MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 1.4W. This RoHS compliant component is supplied in a 75-piece tube.
RoHS Compliant
Width 0.245inch
Height 0.094inch
Length 0.264inch
hFE Min 70
Polarity PNP
Frequency 65MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case DPAK
Max Frequency 65MHz
Current Rating -5A
RoHS Compliant Yes
DC Rated Voltage -25V
Package Quantity 75
Power Dissipation 1.4W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 65MHz
Max Collector Current 5A
Max Power Dissipation 1.4W
Gain Bandwidth Product 65MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 1.8V
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 1.8V

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