MJD44H11G
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Краткое описание:
NPN BJT Transistor 80V 8A DPAK 85MHz
Дополнительная информация
NPN bipolar junction transistor (BJT) in a DPAK package, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. This component offers a transition frequency of 85MHz and a maximum power dissipation of 1.75W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant. The transistor is supplied in a rail/tube package.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 85MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Halogen Free | Halogen Free |
| Package/Case | DPAK |
| Max Frequency | 85MHz |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 75 |
| Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 85MHz |
| Max Collector Current | 8A |
| Max Power Dissipation | 1.75W |
| Gain Bandwidth Product | 85MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 5V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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