MJD44H11TF
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Краткое описание:
8A 80V NPN Power BJT, DPAK, 50MHz, 1.75W
Дополнительная информация
NPN Power Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage and 8A continuous collector current. Offers a maximum power dissipation of 1.75W and a transition frequency of 50MHz. Packaged in DPAK for tape and reel distribution, this RoHS compliant component operates from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Weight | 0.26037g |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Max Frequency | 1MHz |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Power Dissipation | 1.75W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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