MJE172G
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Краткое описание:
PNP BJT 80V 3A TO-225 Power Transistor
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a TO-225 package, featuring an 80V collector-emitter breakdown voltage and a 3A maximum collector current. This power transistor offers a DC rated voltage of -80V, a collector-emitter saturation voltage of 1.7V, and a transition frequency of 50MHz. With a minimum hFE of 50 and a maximum power dissipation of 12.5W, it operates across a temperature range of -65°C to 150°C. This RoHS compliant component is supplied in bulk packaging.
| RoHS | Compliant |
| Width | 0.118inch |
| Height | 0.437inch |
| Length | 0.307inch |
| hFE Min | 50 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-225-3 |
| Max Frequency | 50MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 500 |
| Power Dissipation | 12.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 1.7V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.7V |
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