MMBT100

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MMBT100 - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 500mA IC, 250MHz, SOT-23, SMD
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V Collector-Emitter Voltage (VCEO) and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Packaged in a SOT-23 surface-mount case, this component operates from -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.97mm
Length 2.9mm
Weight 0.03g
hFE Min 100
Polarity NPN
Frequency 250MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 1MHz
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 250MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 350mW
Gain Bandwidth Product 250MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 400mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 400mV