MMBT3646

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MMBT3646 - Onsemi
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Краткое описание: NPN BJT Transistor, 15V VCEO, 300mA IC, SOT-23, SM
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for switching applications. Features a 15V collector-emitter breakdown voltage and a 300mA maximum collector current. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.93mm
Length 2.92mm
Weight 0.03g
hFE Min 30
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 1MHz
Current Rating 300A
RoHS Compliant Yes
DC Rated Voltage 15V
Package Quantity 3000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 15V
Max Collector Current 300mA
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 15V
Collector Emitter Breakdown Voltage 15V
Collector Emitter Saturation Voltage 500mV

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