MMBT5401-7
Снят с производства
Увеличить
Краткое описание:
PNP BJT Transistor, 150V VCEO, 200mA IC, 300MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -200mA. Operates with a gain bandwidth product of 300MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface mount plastic package.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 300MHz |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 300MHz |
| Current Rating | -200mA |
| RoHS Compliant | No |
| DC Rated Voltage | -150V |
| Package Quantity | 1 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -200mA |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
