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NPN BJT Transistor, 60V, 500mA, 100MHz, SOT-23, SMD
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.93mm |
| Length | 2.9mm |
| Weight | 0.03g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
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