MMBTA06-TP
Производится
Увеличить
Краткое описание:
NPN BJT 80V 500mA 100MHz SOT-23 Transistor
Дополнительная информация
NPN bipolar junction transistor in SOT-23 package, featuring 80V collector-emitter breakdown voltage and 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Designed for surface mounting with a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.12mm |
| Length | 3.04mm |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
