MMBTA56-TP
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Краткое описание:
PNP BJT Transistor 80V 500mA SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features 80V collector-emitter breakdown voltage, 500mA maximum collector current, and 250mV collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.12mm |
| Length | 3.04mm |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 50MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 3000 |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 225mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
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