MMDT3904VC-7
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NPN BJT Transistor, 40V, 200mA, 300MHz, SOT-563
Дополнительная информация
NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 200mA maximum collector current. This silicon transistor operates with a 300MHz transition frequency and a minimum hFE of 40. Housed in an ultra-small SOT-563 surface mount plastic package, it offers a 300mV collector-emitter saturation voltage and a 6V emitter-base voltage. Designed for lead-free and RoHS compliant applications, it operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-563 |
| Max Frequency | 300MHz |
| Current Rating | 200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
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