MMST3906-7-F

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MMST3906-7-F - Diodes
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Краткое описание: PNP BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in an ultra-small SOT-323 plastic package. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Designed for surface mount applications with a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 100
Polarity PNP
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Max Frequency 300MHz
Current Rating -200mA
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 200mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -200mA
Collector Base Voltage (VCBO) -40V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -300mV

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