MMST4403-7

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MMST4403-7 - Diodes
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Краткое описание: PNP BJT Transistor 40V 600mA 200MHz SOT-323
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-323 surface mount package. Features a 40V collector-emitter breakdown voltage and a continuous collector current rating of 600mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
RoHS Not Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
hFE Min 30
Polarity PNP
Frequency 200MHz
Lead Free Contains Lead
Packaging Tape and Reel
Package/Case SOT-323
Current Rating -600mA
RoHS Compliant No
DC Rated Voltage -40V
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 1
Transition Frequency 200MHz
Max Breakdown Voltage 40V
Max Collector Current 600mA
Max Power Dissipation 200mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 750mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V

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