MMUN2113LT3G

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MMUN2113LT3G - Onsemi
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Краткое описание: PNP BJT Transistor, 50V, 100mA, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 80. This RoHS compliant and halogen-free component operates from -55°C to 150°C and is supplied on a 10000-piece tape and reel.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 80
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Current Rating -100mA
RoHS Compliant Yes
DC Rated Voltage -50V
Package Quantity 10000
Power Dissipation 400mW
Max Output Current 100mA
Radiation Hardening No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 246mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

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