MPS8099RLRPG
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NPN BJT 80V 500mA 150MHz TO-92 Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 150MHz. Packaged in a TO-92 (TO-226) through-hole mount configuration, with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 2000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
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