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NPN BJT Transistor, 100V, 800mA, TO-92, Through Hole
Дополнительная информация
NPN Bipolar Junction Darlington Transistor featuring a 100V collector-emitter voltage (VCEO) and 100V collector base voltage (VCBO). This through-hole component offers a minimum DC current gain (hFE) of 10000, a continuous collector current of 500mA, and a maximum collector current rating of 800mA. With a transition frequency of 125MHz and a maximum power dissipation of 625mW, it operates within a temperature range of -55°C to 150°C. Packaged in TO-92, this lead-free and RoHS compliant transistor is supplied in bulk.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.93mm |
| Height | 4.7mm |
| Length | 4.7mm |
| Weight | 0.201g |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 5000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Transition Frequency | 125MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 800mA |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
