NTE85

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NTE85 - NTE Electronics
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Краткое описание: NPN BJT TO-92 30V 100nA 625mW -55°C to 150°C
Производитель NTE Electronics
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The NTE85 is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 100nA. It can handle a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor is RoHS compliant and has a transition frequency of 100MHz.
RoHS Compliant
Mount Through Hole
Width 0.165inch
Height 0.21inch
Length 0.204inch
Polarity NPN
Package/Case TO-92
RoHS Compliant Yes
Power Dissipation 625mW
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Collector Current 100nA
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 600mV

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