NTLJS3113PT1G
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P-Channel MOSFET -20V, -7.7A, 40mΩ, DFN6
Дополнительная информация
Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 5.8A. This component offers a low drain-source on-resistance of 40mΩ. Housed in a compact 2mm x 2mm x 0.75mm WDFN6 package with a 0.65mm pitch, it operates within a temperature range of -55°C to +150°C and supports a gate-source voltage of 8V. Key switching characteristics include a turn-on delay time of 6.9ns and a fall time of 17.5ns.
| RoHS | Compliant |
| Width | 2mm |
| Height | 0.75mm |
| Length | 2mm |
| Series | µCool™ |
| Polarity | P-CHANNEL |
| Fall Time | 17.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | DFN |
| Current Rating | -7.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 1.329nF |
| Power Dissipation | 1.9W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Element Configuration | Single |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40MR |
| Drain to Source Breakdown Voltage | 20V |
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