NTMS5P02R2G
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P-Channel Power MOSFET, -20V, -5.4A, 33mΩ, SOIC-8
Дополнительная информация
Single P-channel enhancement-mode power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 7.05A. This component offers a low drain-source on-resistance of 26mΩ at a gate-source voltage of 10V. Designed for surface mounting, it is housed in a narrow SOIC-8 package with dimensions of 5mm length, 4mm width, and 1.5mm height. Operating across a temperature range of -55°C to 150°C, it supports a maximum power dissipation of 2.5W and includes fast switching characteristics with turn-on delay of 22ns and fall time of 55ns.
| RoHS | Compliant |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 33mR |
| Nominal Vgs | -900mV |
| Package/Case | SOIC |
| Current Rating | -5.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 1 |
| Input Capacitance | 1.9nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 790mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 7.05A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 26MR |
| Drain to Source Breakdown Voltage | -20V |
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