PN2907BU

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PN2907BU - Onsemi
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Краткое описание: PNP BJT Transistor, 40V VCEO, 800mA IC, TO-92, Through Hole
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -60V Collector Base Voltage (VCBO) and 40V Collector Emitter Voltage (VCEO). Offers a maximum collector current of 800mA and a minimum hFE of 100. Packaged in TO-92 for through-hole mounting, this lead-free and RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.2mm
Weight 0.179g
hFE Min 100
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 1MHz
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Max Collector Current 800mA
Max Power Dissipation 625mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.6V

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