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NPN BJT Transistor, 9GHz, 10V, 50mA, 150mW, SOT-416
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for high-frequency applications. Features a 9 GHz transition frequency and 10V collector-emitter breakdown voltage. Maximum continuous collector current is 50mA, with a maximum power dissipation of 150mW. This surface-mount device is housed in an SC package, offering a wide operating temperature range from -65°C to 150°C.
| Gain | 16dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.9mm |
| Height | 0.85mm |
| Length | 1.8mm |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 9GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Output Power | 150mW |
| Package/Case | SC |
| Max Frequency | 9GHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Operating Frequency | 9 GHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 9GHz |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.5V |
| Continuous Collector Current | 50mA |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 10V |
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