RN1111MFV(TPL3)

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RN1111MFV(TPL3) - Toshiba
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Краткое описание: NPN BJT, 50V, 100mA, SOT-723 Surface Mount
Производитель Toshiba
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The RN1111MFV(TPL3) is a surface mount NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. It features a high current gain of 700 and is packaged in the SOT-723 package. The transistor has a maximum power dissipation of 150mW and operates over a temperature range of -55°C to 150°C. It is RoHS compliant and available in quantities of 8000 per reel.
RoHS Compliant
Mount Surface Mount
hFE Min 700
Polarity NPN
Packaging Tape and Reel
Package/Case SOT-723
RoHS Compliant Yes
Package Quantity 8000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Max Collector Current 100mA
Max Power Dissipation 150mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 100mA
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V

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