RN1308(TE85L,F)
Производится
Увеличить
Краткое описание:
NPN BJT 50V 100mA 100mW SC Surface Mount
Дополнительная информация
The Toshiba RN1308(TE85L,F) is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 100mW and operates over a temperature range of -55°C to 150°C. This transistor is lead-free and RoHS compliant. It is available in a single unit package, packaged on a tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
