RN1316(TE85L,F)

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RN1316(TE85L,F) - Toshiba
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Краткое описание: NPN BJT 50V 100mA 100mW Surface Mount SC Package
Производитель Toshiba
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The RN1316(TE85L,F) is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 100mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a SC package and is lead-free and RoHS compliant. It has a minimum current gain of 50 and a transition frequency of 250MHz.
RoHS Compliant
Mount Surface Mount
hFE Min 50
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SC
RoHS Compliant Yes
Package Quantity 1
Power Dissipation 100mW
Radiation Hardening No
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 100mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V

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