S2SC4617G

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S2SC4617G - Onsemi
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Краткое описание: NPN BJT Transistor, 50V, 100mA, 180MHz, SOT-416
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in SOT-416 package. Features 50V collector-emitter voltage (VCEO) and 50V collector-base voltage (VCBO). Offers a continuous collector current of 100mA and a maximum power dissipation of 125mW. Exhibits a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel, this component is RoHS compliant and halogen-free.
RoHS Compliant
hFE Min 120
Polarity NPN
Frequency 180MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-416
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 125mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 180MHz
Max Collector Current 100mA
Max Power Dissipation 125mW
Gain Bandwidth Product 180MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 100mA
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 400mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 400mV