SBC807-40WT1G

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SBC807-40WT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 45V, 500mA, 100MHz, SC-70
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-236-3 (SC-70) 3-lead package. Features a maximum collector current of 500mA, collector-emitter breakdown voltage of 45V, and a transition frequency of 100MHz. Offers a minimum hFE of 250 and a maximum power dissipation of 460mW. Operates within a temperature range of -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 0.9mm
Length 2.2mm
hFE Min 250
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case TO-236-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 500mA
Max Power Dissipation 460mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -45V
Collector-emitter Voltage-Max 700mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -700mV

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