SBC846BDW1T1G
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Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6
Дополнительная информация
Dual NPN Bipolar Transistor in a SOT-363-6 package, featuring a 65V Collector Emitter Breakdown Voltage and 100mA Max Collector Current. This component offers a 600mV Collector Emitter Saturation Voltage and a 100MHz transition frequency. Designed for automotive applications with AEC-Q101 qualification, it operates from -55°C to 150°C and has a power dissipation of 380mW. The transistor is RoHS compliant and supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Series | Automotive, AEC-Q101 |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 380mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 380mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
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