SBC847AWT1G

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SBC847AWT1G - Onsemi
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Краткое описание: NPN BJT SOT-323 50V 100mA 150°C
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The SBC847AWT1G is a NPN bipolar junction transistor with a collector-base voltage rating of 50V and a maximum collector current of 100mA. It is packaged in a SOT-323 package and is suitable for operation over a temperature range of -55°C to 150°C. The transistor has a gain bandwidth product of 100MHz and a maximum power dissipation of 150mW. It is lead-free and halogen-free, and is compliant with RoHS regulations.
RoHS Compliant
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-323
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Transition Frequency 100MHz
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 250mV

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