SBC856BWT1G
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PNP Transistor, 65V, 100mA, 150°C, Lead Free, Tape and Reel
Дополнительная информация
The SBC856BWT1G is a PNP transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is lead free and RoHS compliant, packaged in a tape and reel format with 3000 units per package.
| RoHS | Compliant |
| hFE Min | 220 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
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