SBCP56-16T1G
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Краткое описание:
NPN BJT 80V 1A 130MHz SOT-223-4
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) with 80V collector-emitter breakdown voltage and 1A maximum collector current. Features a gain bandwidth product of 130MHz and a collector-emitter saturation voltage of 500mV. Packaged in a SOT-223-4 (TO-261) surface-mount case, this component operates from -65°C to 150°C. It offers an hFE range of 100 to 250 and a maximum power dissipation of 1.5W. Supplied on a 1000-piece tape and reel, this RoHS compliant transistor is lead-free.
| RoHS | Compliant |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| hFE Min | 25 |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-4 |
| Max Frequency | 130MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
