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Краткое описание:
NPN Phototransistor, 880nm, 35V, 50mA, T-1
Дополнительная информация
Silicon NPN phototransistor for optical sensing applications. Features 880nm wavelength sensitivity, 35V collector-emitter breakdown voltage, and 50mA maximum collector current. Housed in a T-1 package with a domed lens for a 50° viewing angle. Operating temperature range from -40°C to 100°C, with 165mW power dissipation. Through-hole mount, RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.4mm |
| Height | 4.8mm |
| Length | 3.4mm |
| Polarity | NPN |
| Fall Time | 12us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 50° |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Power Dissipation | 165mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 165mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 150mV |
