SI4920DY
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Краткое описание:
30V N-Channel MOSFET, 6.9A, 25mR, SO Package
Дополнительная информация
N-channel Power MOSFET in an SO package, featuring a 30V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 6.9A. This device offers a low on-state resistance of 25mR at a nominal Vgs of 1V, with a maximum power dissipation of 2W. Operating across a temperature range of -55°C to 150°C, it exhibits fast switching characteristics with a turn-on delay time of 12ns and a fall time of 15ns.
| RoHS | Not Compliant |
| Width | 4mm |
| Height | 1.55mm |
| Length | 5mm |
| Series | SI4 |
| Weight | 0.006596oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Packaging | Tape and Reel |
| Nominal Vgs | 1V |
| Package/Case | SO |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Number of Channels | 2 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 30V |
| On-State Resistance | 35mR |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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