SMBT3904E6327HTSA1

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SMBT3904E6327HTSA1 - Infineon
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Краткое описание: NPN BJT Transistor, 40V, 0.2A, 330mW, SOT-23
Производитель Infineon
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector-emitter voltage of 40V and a maximum DC collector current of 0.2A. This single-element transistor offers a maximum power dissipation of 330mW and operates across a wide temperature range from -65°C to 150°C. Housed in a 3-pin SOT-23 (TO-236AA) surface-mount plastic package with gull-wing leads, it is suitable for lead-frame SMT assembly.
PCB 3
ECCN EAR99
Type NPN
Jedec TO-236AA
EU RoHS Yes
Category Bipolar Small Signal
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541210080
Package/Case SOT-23
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Package Description Small Outline Transistor
Package Family Name SOT-23
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Minimum DC Current Gain 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 330mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.2A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 300(Min)MHz
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 40V

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