SMBTA92E6327HTSA1
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PNP BJT Transistor, 300V, 500mA, 50MHz, SOT-23
Дополнительная информация
PNP silicon bipolar junction transistor in SOT-23 package. Features 300V collector-emitter breakdown voltage (V(BR)CEO) and 500mA continuous collector current (I(C)). Offers a maximum power dissipation of 360mW and a transition frequency of 50MHz. Operates within a temperature range of -65°C to 150°C. Surface mountable with lead-free and RoHS compliant construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Not Halogen Free |
| Package/Case | SOT-23 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 1 |
| Power Dissipation | 360mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
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