SMMBT2907ALT1G

Производится
SMMBT2907ALT1G - Onsemi
Увеличить
Краткое описание: PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 60V, maximum collector current of 600mA, and a power dissipation of 300mW. Operates with a minimum hFE of 50 and a transition frequency of 200MHz. This lead-free, RoHS compliant component is supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
hFE Min 50
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -400mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.