SMMBT2907ALT3G

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SMMBT2907ALT3G - Onsemi
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Краткое описание: PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP bipolar junction transistor in a SOT-23-3 package, offering a 60V collector-emitter voltage (VCEO) and a continuous collector current of -600mA. Features a maximum power dissipation of 300mW, a transition frequency of 200MHz, and a minimum hFE of 50. Operates across a temperature range of -55°C to 150°C and is RoHS compliant. Supplied on a 10000-piece tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
hFE Min 50
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 10000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 200MHz
Max Breakdown Voltage 60V
Max Collector Current 600mA
Max Power Dissipation 300mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -600mA
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.6V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -400mV

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