SMMBT5551LT1G
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Краткое описание:
NPN BJT 160V 600mA 225mW SOT-23-3
Дополнительная информация
The SMMBT5551LT1G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 160V and a maximum collector current of 600mA. It has a maximum power dissipation of 225mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-23-3 package and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Weight | 0.001376oz |
| hFE Min | 20 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 225mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 250mV |
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