SMMBTA06LT1G
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Краткое описание:
NPN BJT 80V 500mA 100MHz SOT-23 Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) in a SOT-23-3 package, featuring an 80V collector-emitter breakdown voltage and a maximum collector current of 500mA. This component offers a 250mV collector-emitter saturation voltage and a transition frequency of 100MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. Supplied on tape and reel, this RoHS compliant transistor is designed for automotive applications.
| RoHS | Compliant |
| Width | 2.64mm |
| Height | 1.11mm |
| Length | 3.04mm |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 225mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
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