SMMBTA92LT1G

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SMMBTA92LT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 300V, 500mA, 50MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 300V collector-emitter breakdown voltage (VCEO) and a 300V collector-base voltage (VCBO). Offers a maximum collector current of 500mA and a power dissipation of 300mW. Operates with a transition frequency of 50MHz and a minimum hFE of 25. Packaged on a 3000-piece tape and reel.
RoHS Compliant
Width 2.64mm
Height 1.11mm
Length 3.04mm
hFE Min 25
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage -500mV

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