SMUN5230DW1T1G
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Dual NPN BJT, 50V, 100mA, SOT-363-6
Дополнительная информация
Dual NPN Bipolar Digital Transistor (BRT) in a compact SOT-363-6 package. Features a 50V collector-emitter voltage (VCEO) and a 50V collector base voltage (VCBO). Offers a maximum collector current of 100mA and a low collector-emitter saturation voltage of 250mV. Operating temperature range spans from -55°C to 150°C. This component is RoHS compliant and Halogen Free, supplied in a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| hFE Min | 3 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-363-6 |
| Max Frequency | 10kHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Max Output Current | 100A |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 187mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
